FQP13N50
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP13N50
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 170 W 500 V Continuous Drain Current (ID):12.5 A 60 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 500 V |
| Length | 6.35 mm |
| Width | 6.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 430 mΩ |
| Height | 6.35 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 12.5 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 170 W |
| Power Dissipation | 170 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.3 nF |
| Continuous Drain Current (ID) | 12.5 A |
| Rds On Max | 430 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Turn-On Delay Time | 40 ns |
| Turn-Off Delay Time | 100 ns |
| Element Configuration | Single |
| Fall Time | 85 ns |
| Rise Time | 140 ns |
| Dual Supply Voltage | 500 V |
| Gate Charge | 60 nC |
| Drain to Source Resistance | 430 mΩ |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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